Post-growth treatment effects on properties of CuInS2 thin films deposited by RF reactive sputtering

Semiconductor Science and Technology

Volumn 20, Issue 8, 2005, Pages 685-692

  He, Y B ^a,b   Kramer T ^a   Osterreicher I ^a   Polity, A ^a   Meyer, B K ^a   Hardt, M ^a  

^a JUSTUS LIEBIG UNIVERSITY   (Germany)

^b HUBEI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COPPER COMPOUNDS; CRYSTALLIZATION; HEATING; LIGHT TRANSMISSION; NATURAL FREQUENCIES; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SPUTTER DEPOSITION; THIN FILMS; VACUUM; X RAY DIFFRACTION ANALYSIS;

FILM SURFACES; POST-GROWTH TREATMENT EFFECTS; REACTIVE SPUTTERING; SULFURIZATION;

GROWTH KINETICS;

EID: 22944433886     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/8/006     Document Type: Article

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