Growth and characterization of CuInS2 films grown by Rf ion-plating

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 11, 1997, Pages 6668-6671

  Kondo, Ken Ichi ^b   Nakamura, Susumu ^b   Sano, Hiroyuki ^b   Hirasawa, Hiroshi ^b   Sato, Katsuaki ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b STANLEY ELECTRIC CO LTD   (Japan)

Author keywords

Characterization; Crystallinity; CuInS2; Ion plating; Low temperature; Thin film growth

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL STRUCTURE; ELECTRON BEAMS; FILM GROWTH; MORPHOLOGY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE STRUCTURE; THIN FILMS;

CHALCOPYRITES; COPPER INDIUM SULFIDE; ION PLATING;

SEMICONDUCTING FILMS;

EID: 0031271229     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6668     Document Type: Article

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