Switching kinetics in nanoferroelectrics

Journal of Physics Condensed Matter

Volumn 17, Issue 30, 2005, Pages 4843-4852

  Jung, D J ^a,b   Kim, Kinam ^b   Scott, J F ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CRYSTAL GROWTH; ELECTRIC POTENTIAL; HYDROGEN; LEAD COMPOUNDS; LINEAR PROGRAMMING; MATHEMATICAL MODELS; NUCLEATION; PERMITTIVITY; PLASMA ETCHING; QUADRATIC PROGRAMMING; RANDOM ACCESS STORAGE; SWITCHING;

FERROELECTRIC RANDOM ACCESS MEMORY (FRAM); FRINGING FIELD EFFECTS; NUCLEATION MODELS; SWITCHING KINETICS;

FERROELECTRIC DEVICES;

EID: 22844445259     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/17/30/010     Document Type: Article

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