Simulation of dose uniformity for different pulse durations during inner surface plasma immersion ion implantation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 2, 1999, Pages 875-878

  Liu, A G ^a   Wang, X F ^a   Wang, S Y ^a   Tang, B Y ^a   Chu, P K ^a   Zeng, Z M ^b   Tian, X B ^b  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b HARBIN INSTITUTE OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22644451851     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590667     Document Type: Article

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