Novel process for SiO2/Si selective etching using a novel gas source for preventing global warming

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 3, 1999, Pages 957-960

  Fujita, Kazushi ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22644451368     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (17)

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