Investigation of field emission characteristics for Si-base materials: Titanium silicide, poly-Si, and single crystal Si

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 2, 1999, Pages 635-637

  Lim, Moo Sup ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22644450539     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591079     Document Type: Article

References (6)

1. K. Higa, K. Nishii, and T. Asano, Technical Digest of the 10th International Vacuum Microelectronics Conference, 1997, p. 78.
2. C. A. Spindt, C. E. Holland, A. Rosenberg, and I. Brodie, IEEE Trans. Electron Devices 38, 2355 (1991).
3. J. H. Jung, B. K. Ju, Y. H. Lee, M. H. Oh, and J. Jang, Tech. Dig. Int. Electron Devices Meet. 293 (1996).
4. C. C. Wang, T. K. Ku, L. J. Hsieh, and H. C. Cheng, Jpn. J. Appl. Phys., Part 1 35, 3681 (1996).
5. C. M. Park, M. S. Lim, B. H. Min, M. K. Han, and Y. I. Choi, Tech. Dig. Int. Electron Devices Meet. 305 (1996).
6. C. M. Park, M. S. Lim, and M. K. Han, IEEE Electron Device Lett. 18, 538 (1997).