A novel in situ vacuum encapsulated lateral field emitter triode

IEEE Electron Device Letters

Volumn 18, Issue 11, 1997, Pages 538-540

  Park, Cheol Min ^a   Lim, Moo Sup ^a   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRON EMISSION; ENCAPSULATION; FIELD EMISSION CATHODES; OXIDATION; REACTIVE ION ETCHING; TRANSCONDUCTANCE; VACUUM APPLICATIONS;

VACUUM ENCAPSULATED FIELD EMITTER TRIODES;

TRIODES;

EID: 0031269473     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.641438     Document Type: Article

References (8)

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2. C. A. Spindt, C. E. Holland, P. R. Schwoebel, and I. Brodie, "Field-emitter-array development for microwave applications," in IEDM Tech. Dig., 1995, pp. 389-392.
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5. C. G. Lee, B. G. Park, and J. D. Lee, "A new fabrication process of field emitter arrays with submicron gate apertures using local oxidation of silicon," IEEE Electron Device Lett., vol. 17, pp. 115-117, Mar. 1996.
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7. T. T. Tsong, "Dynamic behavior and instability of field emitter surfaces," IEEE Trans. Electron Devices, vol. 38, pp. 2317-2319. Oct. 1991.
8. C.-M. Park, M.-S. Lim, B.-H. Min, M.-K. Han, and Y.-I. Choi, "A novel lateral field emitter triode with in situ vacuum encapsulation," in IEDM Tech. Dig., 1996, pp. 533-536.