Effect of amorphous Si quantum-dot size on 1.54 μm luminescence of Er

Journal of the Electrochemical Society

Volumn 152, Issue 6, 2005, Pages

  Park, Nae Man ^a   Kim, Tae Youb ^a   Kim, Kyung Hyun ^a   Sung, Gun Yong ^a   Kim, Baek Hyun ^b   Park, Seong Ju ^b   Cho, Kwan Sik ^c   Shin, Jung H ^c   Lee, Jung Kun ^d   Nastasi, Michael ^d  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^d LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ENERGY TRANSFER; ERBIUM; IONS; PHOTOLUMINESCENCE; RESONANCE;

ER LUMINESCENCE; PHOTOLUMINESCENCE INTENSITY; PUMP POWER; QUANTUM-DOT SIZE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 22644446715     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1901662     Document Type: Article

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