InGaAs/InP heterostructural materials for opto-electronic integrated circuit receiver application grown by gas source molecular beam epitaxy

Journal of the Korean Physical Society

Volumn 46, Issue SUPPL. II, 2005, Pages

  Chen, Xiaojie ^a   Xu, Anhuai ^a   Ai, Likun ^a   Qi, Ming ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

HBT; InGaAs; Molecular beam epitaxy; OEICs

Indexed keywords

EID: 22544468849     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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