20GHz bandwidth monolithic optoelectronic receiver based on SSMBE-grown InP HBT technology

Electronics Letters

Volumn 32, Issue 18, 1996, Pages 1719-1720

  Westergren, U ^a   Willen B ^a   Asonen, H ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

Heterojunction bipolar transistors; Molecular beam epitaxial growth; Optical receivers

Indexed keywords

COMPUTER SIMULATION; ELECTRIC VARIABLES MEASUREMENT; HETEROJUNCTION BIPOLAR TRANSISTORS; LIGHT AMPLIFIERS; MOLECULAR BEAM EPITAXY; OPTIMIZATION; PHOTODIODES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SIGNAL RECEIVERS;

MONOLITHIC INTEGRATION; MONOLITHIC OPTOELECTRONIC RECEIVERS; OPTICAL RECEIVERS; SINGLE POWER SUPPLY VOLTAGE; SOLID SOURCE MOLECULAR BEAM EPITAXY;

INTEGRATED OPTOELECTRONICS;

EID: 0030219488     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961163     Document Type: Article

References (4)

1. CHANDRASEKHAR, S,. DENTAl, A.G., JOYNER, C.H, JOHNSON, B.C., GNAUCK, A.H., and QUA, G.J.: '4Gbit/s pin/HBT monolithic photoreceiver'. Electron. Lett., 1990, 22, pp. 1880-1882
2. TOIVONEN, M., SALOKATVE, A., TAPPURA, K., JALONEN, M., SAVOLAINEN, P., NÄPPI, J., PESSA, M., and ASONEN, H.: 'Solid source MBE for phosphide-based devices'. 8th Int. Conf. on Indium Phosphide and Related Materials, 1996, pp. 79-82
3. WILLEN, B., MOKHTARI, M., and WESTERGREN, U.: 'New planarisation process for low current, high speed InP/InGaAs heterojunction bipolar transistors', Electron. Lett., 1996, 32, pp. 266-267
4. KJEBON, O., SCHATZ, R., LOURDUDOSS, S., NILSSON, S., and STALNACKE, B.: 'Modulation response meaurements and evaluation of MQW InGaAsP lasers of various designs'. High-Speed Semicondcutor Laser Sources, 1996, 2684, pp. 138-152