Influence of geometrical and electrical parameters of masking layers on the electrochemical etching of silicon for single trench formation

Journal of Physics: Conference Series

Volumn 10, Issue 1, 2005, Pages 251-254

  Gautier, G ^a   Ventura, L ^a   Jerisian R ^a  

^a UNIVERSITÉ DE TOURS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22544437879     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/10/1/062     Document Type: Article

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