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Volumn 281, Issue 2-4, 2005, Pages 249-254

Influence of arsenic pressure on photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

(7) Pavelescu, E M a Hakkarainen, T a Dhaka, V D S a Tkachenko, N V a Jouhti, T a Lemmetyinen, H a Pessa, M a

a TAMPERE UNIVERSITY OF TECHNOLOGY (Finland)

Author keywords

A1. Photoluminescence; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Dilute nitride alloys

Indexed keywords

ARSENIC; CRYSTAL STRUCTURE; INTERDIFFUSION (SOLIDS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PRESSURE EFFECTS; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM COMPOUNDS; X RAY DIFFRACTION;

ARSENIC PRESSURE; BANDGAP REDUCTION; DILUTE NITRIDE ALLOYS; EMISSION WAVELENGTH;

SEMICONDUCTOR QUANTUM WELLS;

EID: 22144465880 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.04.025 Document Type: Article

Times cited : (12)

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