Radiation-induced conductivity of doped silicon in response to photon, proton and neutron irradiation

Journal of Nuclear Materials

Volumn 283-287, Issue PART II, 2000, Pages 907-911

  Kishimoto, N ^a   Amekura, H ^a   Plaksin, O A ^b   Stepanov, V A ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b INSTITUTE OF PHYSICS AND POWER ENGINEERING   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 21844478769     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3115(00)00161-6     Document Type: Article

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