Radiation-resistant photoconductivity of doped silicon under 17 MeV proton bombardment

Journal of Nuclear Materials

Volumn 233-237, Issue PART II, 1996, Pages 1244-1248

  Kishimoto, N ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CORRELATION THEORY; ELECTRIC EXCITATION; IMPURITIES; IRRADIATION; PHOTOCONDUCTIVITY; REAL TIME SYSTEMS; SEMICONDUCTOR DOPING;

PROTON INDUCED ELECTRONIC EXCITATION; RADIATION RESISTANT PHOTOCONDUCTIVITY;

SEMICONDUCTING SILICON;

EID: 0030264848     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3115(96)00112-2     Document Type: Article

References (2)

1. H.Y. Fan and A.K. Ramdas, J. Appl. Phys. 30 (1959) 1127.
2. J.W. Corbett, G.D. Watkins, R.M. Chrenko and R.S. McDonald, Phys. Rev. 121 (1961) 1015.