High performance InAs quantum dot infrared photodetectors (QDIP) on InP by MOCVD

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5732, Issue , 2005, Pages 326-333

  Zhang, Wei ^a   Lim, Ho Chul ^a   Taguchi, Maho ^a   Tsao, Stanley ^a   Szafraniec, John ^a   Movaghar, Bijan ^a   Razeghi, Manijeh ^a   Tidrow, Mei Mei ^b  

^a Northwestern University   (United States)

^b ARMED FORCES INSTITUTE OF PATHOLOGY   (United States)

Author keywords

Detector; InAs; Infrared; InP; MOCVD; Quantum dot; Quantum efficiency; Resonant cavity enhancement

Indexed keywords

INAS; INP; QUANTUM DOT INFRARED PHOTODETECTORS (QDIP); RESONANT CAVITY ENHANCEMENT;

CAVITY RESONATORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

INFRARED DETECTORS;

EID: 21844477823     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.597139     Document Type: Conference Paper

References (19)

1. 0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260K", Appl.Phys.Lett. 82, pp. 1986-1988, March 2003.
2. Dong Pan, Elias Towe, Steve Kennedy, "Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors", Appl.Phys.Lett. 73, pp.1937-1939, Oct 1998.
3. 0.85As dots-in-a-well detector", Appl.Phys.Lett. 81, pp. 1369-1371, Aug 2002.
4. Jamie Phillips, "Evalution of the fundamental properties of quantum dot infrared photodetectors", J.Appl.Phys 91, pp. 4590-4594, Apr 2002.
5. Zhonghui Chen, Eui-Tae Kim, and Anupam Madhukar, "Normal-incidence voltage-tunable middle- and long-wavelength infrared photoresponse in self-assembled InAs quantum dots", Appl.Phys.Lett. 80, pp. 2490-2492 Apr 2002.
6. E. Finkman, S. Maimon, V. Immer, G. Bahir, S. E. Schacham, F. Fossard, F. H. Julien, J. Brault and M. Gendry, "Polarized frontillumination response in intraband quantum dot infrared photodetectors at 77 K", Phys. Rev. B 63, 045323 (2001)
7. H. Hwang, K. Park, S. Yoon, E. Yoon, H. Cheong, and Y. Kim, "Growth and in situ analysis of InAs/InP quantum dot stack and its far infrared absorption properties", Proc. of SPIE 4999, 229 (2003).
8. Y. W. Mo, D. E. Savage, B. S. Schwartzentruber, and M. G. Lagally, "Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)", Phys. Rev. Lett. 65, 1020 (1990).
9. V. M. Ustinov, E. R. Weber, S. Ruvimov, Z. Liliental-Weber, A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, A. F. Tsatsul'nikov, and P. S. Kop'ev, "Effect of matrix on InAs self-organized quantum dots on InP substrate", Appl. Phys. Lett. 72, 362 (1998).
10. M. Erdtmann, A. W. Matlis, C. L. Jelen, M. Razeghi, and G. J. Brown, "Growth and optimization of GalnAsP/InP material system for quantum well infrared photodetector applications", Proc. SPIE Int. Soc. Opt. Eng. 3948, 220 (2000)
11. J.Jiang, K.Mi, R.McClintock, M.Razeghi, C.Jelen, G.Brown, IEEE Photonics Tech. Lett. 15, 1273 (2003).
12. M. Razeghi, The MOCVD Challenge Vol 1 (Adam Hilger, Bristol, 1989).
13. Y. M. Qiu and D. Uhl, "Effect of thin GaAs interface layer on InAs quantum dots grown on InGaAs/InP using metalorganic vapor phase epitaxy", J. Cryst. Growth 257, 225 (2003).
14. Wei Zhang, Hochul Lim, Stanley Tsao, Kan Mi, Bijan Movaghar, Thomas Sills, Jutao Jiang, and Manijeh Razeghi, "InAs quantum dot infrared photodetectors (QDIP) on InP by MOCVD", Proc. SPIE Int. Soc. Opt. Eng. 5543, 22 (2004)
15. J. Jiang, S. Tsao, T. O'Sullivan, W. Zhang, H. Lim, T. Sills, K. Mi, and M. Razeghi, G. J. Brown, M. Z. Tidrow, "High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition", Appl.Phys.Lett. 84, 2166 (2004).
16. Z. M. Ye, J. C. Campbell, Z. H. Chen, E. T. Kim, and A. Madhukar, "Noise and photoconductive gain in InAs quantum-dot infrared photodetectors", Appl. Phys. Lett. 83, 1234 (2003).
17. M. S. Ünlü and S. Strite, "Resonant cavity enhanced photonic devices", J. Appl. Phys. 78, 607 (1995).
18. B. Butun, N. Biyikli, I. Kimukin, O. Aytur, E. Ozbay, P. A. Postigo, J. P. Silveira, and A. R. Alija, "High-speed 1.55 μm operation of low-temperature-grown GaAs-based resonant-cavity-enhanced p-i-n photodiodes", Appl. Phys. Lett. 84, 4185 (2004).
19. W. Ashcroft and N. David Mermin, Solid State Physics, pp. 18-19, Saunders College, New York, 1976.