메뉴 건너뛰기




Volumn 5738, Issue , 2005, Pages 40-46

High power and highly reliable 980nm lasers with window structure using impurity free vacancy disordering

Author keywords

DCH; IFVD; InGaAs; NAM; Pump source for amplifiers; Reliability; Semiconductor laser diode; Window laser

Indexed keywords

ERBIUM; FIBER LASERS; HETEROJUNCTIONS; MIRRORS; RELIABILITY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS;

EID: 21844477551     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.589962     Document Type: Conference Paper
Times cited : (10)

References (11)
  • 1
    • 0032663761 scopus 로고    scopus 로고
    • High power InGaAs/AlGaAs laser diodes with decoupled confinement heterostructure
    • In-Plain Semiconductors 3, H. K. Choi and P. S. Zory, eds
    • T. Fujimoto et al., "High power InGaAs/AlGaAs laser diodes with decoupled confinement heterostructure", in In-Plain Semiconductors 3, H. K. Choi and P. S. Zory, eds, Proc. SPIE 3628, pp.38-45 (1999).
    • (1999) Proc. SPIE , vol.3628 , pp. 38-45
    • Fujimoto, T.1
  • 2
    • 21844474565 scopus 로고    scopus 로고
    • Characteristics of the high-power 980nm laser diodes with decoupled confinement heterostructure
    • San Diego
    • A. Okubo et al., "Characteristics of the high-power 980nm laser diodes with decoupled confinement heterostructure", in Proceeding of the Optical Fiber Communication conference and Exhibit (OFC), TuC3-l, pp.26-27, San Diego (1999).
    • (1999) Proceeding of the Optical Fiber Communication Conference and Exhibit (OFC) , vol.TUC3L , pp. 26-27
    • Okubo, A.1
  • 3
    • 7744230525 scopus 로고    scopus 로고
    • High power 980nm pump laser diodes with decoupled confinement hetero-structure
    • Stresa, Italy, OMB21
    • K. Muro et al., "High power 980nm pump laser diodes with decoupled confinement hetero-structure" in Technical Digest of Optical Amplifiers and Their Applications, Stresa, Italy, OMB2-1 (2001).
    • (2001) Technical Digest of Optical Amplifiers and Their Applications
    • Muro, K.1
  • 4
    • 21844440596 scopus 로고    scopus 로고
    • Time stability of 500mW 980nm pump laser module with polarization- maintaining fiber
    • Otaru, Japan, MD14
    • T. Koiso et al, "Time stability of 500mW 980nm pump laser module with polarization-maintaining fiber," in Technical Digest of Optical Amplifiers and Their Applications, Otaru, Japan, MD14 (2003).
    • (2003) Technical Digest of Optical Amplifiers and Their Applications
    • Koiso, T.1
  • 5
    • 0033123733 scopus 로고    scopus 로고
    • Reliability improvement of 980nm laser diodes with a new facet passivation process
    • H. Horie et al, "Reliability improvement of 980nm laser diodes with a new facet passivation process," IEEE J. Select. Topics Quantum Electron., vol. 5, pp. 832-833 (1999)
    • (1999) IEEE J. Select. Topics Quantum Electron. , vol.5 , pp. 832-833
    • Horie, H.1
  • 6
    • 0032163251 scopus 로고    scopus 로고
    • Improvement of catastrophic optical damage (COD) level for high-power 0.98-um GaInAs-GaInP laser diodes using impurity induced layer disordering
    • J. K. Lee et al, "Improvement of catastrophic optical damage (COD) level for high-power 0.98-um GaInAs-GaInP laser diodes using impurity induced layer disordering," IEEE Photon. Technol. Lett., vol. 10, pp. 1226-1228 (1998)
    • (1998) IEEE Photon. Technol. Lett. , vol.10 , pp. 1226-1228
    • Lee, J.K.1
  • 7
    • 0033123904 scopus 로고    scopus 로고
    • High-power and highly reliable operation of Al-free InGaAs-InGaAsP 0.98um lasers with a window structure fabricated by Si ion implantation
    • K. Hiramoto et al, "High-power and highly reliable operation of Al-free InGaAs-InGaAsP 0.98um lasers with a window structure fabricated by Si ion implantation," IEEE J. Select. Topics Quantum Electron., vol. 5, pp817-820 (1999).
    • (1999) IEEE J. Select. Topics Quantum Electron. , vol.5 , pp. 817-820
    • Hiramoto, K.1
  • 8
    • 0000587351 scopus 로고
    • Strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure lasers with nonabsorbing mirrors by selective-area MOCVD
    • R. M. Lammert et al, "Strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure lasers with nonabsorbing mirrors by selective-area MOCVD," Electon. Lett., vol. 31, pp. 1070-1072 (1995).
    • (1995) Electon. Lett. , vol.31 , pp. 1070-1072
    • Lammert, R.M.1
  • 9
    • 0000851243 scopus 로고
    • Stripe geometry quantum well heterostructure AlxGa1-xAs-GaAs lasers defined by defect diffusion
    • D. G. Deppe et al, "Stripe geometry quantum well heterostructure AlxGa1-xAs-GaAs lasers defined by defect diffusion," Appl. Phys. Lett. 49, (9), pp. 510-512 (1986).
    • (1986) Appl. Phys. Lett. , vol.49 , Issue.9 , pp. 510-512
    • Deppe, D.G.1
  • 10
    • 0032656105 scopus 로고    scopus 로고
    • Non-absorbing mirrors for AlGaAs quantum well lasers by impurity-free interdiffusion
    • P. Collot et al, "Non-absorbing mirrors for AlGaAs quantum well lasers by impurity-free interdiffusion," Proceedings of SPIE vol. 3628, pp.260-266 (1999)
    • (1999) Proceedings of SPIE , vol.3628 , pp. 260-266
    • Collot, P.1
  • 11
    • 0036773497 scopus 로고    scopus 로고
    • Improved catastrophic optical damage level from laser with nonabsorbing mirrors
    • C. L. Walker et al, "Improved catastrophic optical damage level from laser with nonabsorbing mirrors," IEEE Photon. Technol. Lett., vol. 14, pp. 1394-1396 (2002)
    • (2002) IEEE Photon. Technol. Lett. , vol.14 , pp. 1394-1396
    • Walker, C.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.