Improvement of catastrophic optical damage (COD) level for high-power 0.98-μm GaInAs-GaInP laser diodes using impurity induced layer disordering

IEEE Photonics Technology Letters

Volumn 10, Issue 9, 1998, Pages 1226-1228

  Lee, J K ^b,c   Park, K H ^b   Jang, D H ^b   Cho, H S ^a,b   Park, C S ^a,b   Pyun, K E ^a,b   Jeong, J ^a,c  

^a IEEE

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c Korea University   (South Korea)

Author keywords

Catastrophic optical damage (COD); Impurity induced layer disordering (IILD); Optical pumping; Semiconductor lasers

Indexed keywords

ANNEALING; CRYSTAL IMPURITIES; ENERGY GAP; ION IMPLANTATION; OPTICAL PUMPING; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WELLS;

CATASTROPHIC OPTICAL DAMAGE (COD); IMPURITY INDUCED LAYER DISORDERING (IILD);

SEMICONDUCTOR LASERS;

EID: 0032163251     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.705598     Document Type: Article

References (9)

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