High power InGaAs/AlGaAs laser diodes with decoupled confinement heterostructure

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3628, Issue , 1999, Pages 38-45

  Fujimoto, T ^a   Yamada, Yumi ^a   Yamada, Yoshikazu ^a   Okubo, A ^a   Oeda, Y ^a   Muro, K ^a  

^a MITSUI CHEMICALS INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC RESISTANCE; HEAT RESISTANCE; HETEROJUNCTIONS; HIGH POWER LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; TEMPERATURE;

DECOUPLED CONFINEMENT HETEROSTRUCTURE; HIGH POWER LASER DIODE;

SEMICONDUCTOR LASERS;

EID: 0032663761     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.344544     Document Type: Conference Paper

References (15)