Structural and composition analysis of GaN films deposited by cyclic-PLD at different substrate temperatures

Sensors and Actuators, A: Physical

Volumn 121, Issue 1, 2005, Pages 131-135

  Sanguino, P ^a   Teodoro, O M N D ^b   Niehus, M ^a   Marques, C P ^c   Moutinho, A M C ^b   Alves, E ^c   Schwarz, R ^a  

^a INSTITUTO SUPERIOR TÉCNICO   (Portugal)

^b UNIVERSIDADE NOVA DE LISBOA   (Portugal)

^c INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

Author keywords

GaN; PLD; RBS; X ray diffraction; XPS

Indexed keywords

ALUMINA; CRYSTAL STRUCTURE; DEPOSITION; DIFFUSION; GRAIN SIZE AND SHAPE; PULSED LASER DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; THIN FILMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

CRYSTAL ALIGNMENT; GAN; RBS; SUBSTRATE TEMPERATURES;

GALLIUM NITRIDE;

EID: 21744452034     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2004.12.028     Document Type: Article

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