Low resistance AL 2 O 3 magnetic tunnel junctions optimized through in situ conductance measurements

Journal of Applied Physics

Volumn 97, Issue 12, 2005, Pages

  Wolfman, J ^a,b   Mauri, D ^a   Lin, T ^a   Yang, J ^a   Chen, T ^a  

^a SAN JOSE RESEARCH CENTER   (United States)

^b UNIVERSITÉ DE TOURS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC RANDOM ACCESS MEMORY (MRAM); MAGNETIC TUNNEL JUNCTIONS (MTJ); NANO-OXIDE LAYERS (NOL); TUNNEL MAGNETORESISTANCE (TMR);

ALUMINA; ELECTRIC CONDUCTANCE; ELECTRON TUNNELING; ION BEAM ASSISTED DEPOSITION; MAGNETORESISTANCE; PHYSICAL VAPOR DEPOSITION; PRESSURE EFFECTS; RANDOM ACCESS STORAGE;

TUNNEL JUNCTIONS;

EID: 21644490207     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1929864     Document Type: Article

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