Monolithically integrated HgCdTe focal plane arrays

Journal of Electronic Materials

Volumn 34, Issue 6, 2005, Pages 820-831

  Velicu, S ^a   Lee, T S ^a   Grein, C H ^a   Boieriu, P ^a   Chen, Y P ^b   Dhar, N K ^b   Dinan, J ^c   Lianos, D ^d  

^a EPIR TECHNOLOGIES INC   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c NIGHT VISION AND ELECTRONIC SENSORS DIRECTORATE   (United States)

^d U S ARMY SPACE AND MISSILE DEFENSE COMMAND   (United States)

Author keywords

CdTe Si; Fourier transform infrared (FTIR); Hall; HgCdTe; Lifetime; Molecular beam epitaxy (MBE); Monolithic; Readout integrated circuit (ROIC); Reflection high energy electron diffraction (RHEED)

Indexed keywords

CRYSTALLOGRAPHY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED DEVICES; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SENSORS; SILICON WAFERS; THERMAL EXPANSION;

HALL; HGCDTE FOCAL PLANE ARRAYS; READOUT INTEGRATED CITCUITS (ROIC); ROA;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 21644482655     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0027-3     Document Type: Conference Paper

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