Vertical profiles and CD loss control in deep RIE technology

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn 3, Issue , 2004, Pages 1848-1851

  Liu, Xuesong ^a   Wang, Chengwei ^a   Zhu, Yong ^a   Yan, Guizhen ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Anisotropy parameter; CD loss; Deep RIE; ICP; MEMS

Indexed keywords

ANISOTROPY; ASPECT RATIO; CAPACITANCE; INDUCTIVELY COUPLED PLASMA; MICROELECTROMECHANICAL DEVICES; SIGNAL THEORY; SILICON; STRESS ANALYSIS;

ADVANCED SILICON ETCHING (ASE); ANISOTROPY PARAMETERS; CD LOSS; DEEP REACTIVE ION ETCHING (DRIE);

REACTIVE ION ETCHING;

EID: 21644480489     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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