State of the art thermal analysis of GaAs/InGaP HBT

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2004, Pages 79-82

  Van Der Wel, P J ^a   Bielen, J A ^a   Henderson, T ^b   Middleton, J ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

Beta degradation; Infra red thermography; InGaP HBT; Marsh method; RF power amplifiers; Thermal analysis; Thermal conductivity

Indexed keywords

BETA DEGRADATION; INFRA-RED THERMOGRAPHY; MARSH METHOD; RF POWER AMPLIFIERS;

DEGRADATION; HETEROJUNCTION BIPOLAR TRANSISTORS; POWER AMPLIFIERS; RELIABILITY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS; TECHNOLOGY TRANSFER; THERMOANALYSIS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 21644463754     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2004.1392495     Document Type: Conference Paper

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