Reliability of commercial InGaP/GaAs HBTs under high voltage operation

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2003, Pages 71-73

  Feng, Kevin ^a   Yang, Yuefei ^a   Nguyen, Chanh ^a  

^a Global Communication Semiconductors   (United States)

Author keywords

High voltage operation; InGaP HBTs; Reliability

Indexed keywords

ACTIVATION ENERGY; ELECTRIC BREAKDOWN; ELECTRIC POWER SUPPLIES TO APPARATUS; POWER AMPLIFIERS; RELIABILITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; THERMODYNAMIC STABILITY;

GRADUAL BETA DRIFT; HIGH BREAKDOWN VOLTAGE; HIGH VOLTAGE OPERATION; OPTIMAL COLLECTOR LAYER THICKNESS; THERMAL MANAGEMENT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0346935282     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. D. Hill and T. S. Kim, "28-V low thermal-impedence HBT with 20-W CW output power," IEEE Trans. On Microwave Theory and Technology, 45, pp. 2224-2228 (1997).
2. P. Kurpas, et al., "Development and characterization of GaInP/GaAs HBTs for high voltage operation," GaAs MANTECH Technical Digest, pp. 23-25, May 2001.
3. Y. Yang et al., "Development of High-Gain and High-Efficiency InGaP/GaAs HBT for High-Voltage Operation", GaAs MANTECH Technical Digest, 2003.
4. B. Yeats, et al., "Reliability of InGaP emitter HBTs at high collector voltage," 2002 GaAs IC Symposium Technical Digest, pp73-76.