A fully integrated CMOS and high voltage compatible RF MEMS technology

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 35-38

  Guan, Lingpeng ^a   Sin, Johnny K O ^a   Liu, Haitao ^b   Xiong, Zhibin ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b Department of Theoretical and Applied Mechanics and the Cornell Nanofabrication Facility   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; DIELECTRIC DEVICES; ELECTRIC POTENTIAL; MOSFET DEVICES; NATURAL FREQUENCIES; SILICON ON INSULATOR TECHNOLOGY; WIRELESS TELECOMMUNICATION SYSTEMS; ELECTRIC SWITCHES; ELECTROMECHANICAL DEVICES; HAFNIUM OXIDES; MEMS;

DRIFT REGIONS; HIGH VOLTAGE EFFECTS; RADIO FREQUENCY (RF); SUBSTRATE RESISTIVITY;

MICROELECTROMECHANICAL DEVICES; HIGH-K DIELECTRIC;

CMOS DEVICES; FULLY INTEGRATED; HIGH VOLTAGE CMOS; HIGH-VOLTAGE MOSFET; HIGH-VOLTAGES; MICROELECTROMECHANICAL-SYSTEMS TECHNOLOGIES; PERFORMANCE; RADIO FREQUENCY MICROELECTROMECHANICAL SYSTEMS; RADIO FREQUENCY MICROELECTROMECHANICAL SYSTEMS SWITCHES; RF : RADIO FREQUENCY;

EID: 21644456524     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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8. C.L. Goldsmith, et al., "Performance of Low-Loss RF MEMS Capacitive Switches", IEEE Microwave and Guided Wave Letters, Vol. 8, No. 8, pp. 269-271, 1998.