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Volumn 42, Issue 2 A, 2003, Pages 414-417
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Tunnel barrier formation in silicon nanowires
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Author keywords
Coulomb blockade; Double dot; Silicon single electron transistor; Voltage dependent tunnel barriers
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Indexed keywords
COULOMB BLOCKADE;
DOPING (ADDITIVES);
ELECTRON BEAM LITHOGRAPHY;
ETCHING;
NANOSTRUCTURED MATERIALS;
OSCILLATIONS;
OXIDATION;
REACTIVE ION ETCHING;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR QUANTUM DOTS;
SILICON ON INSULATOR TECHNOLOGY;
MULTIPLE TUNNEL JUNCTIONS;
PATTERN-DEPENDENT LOCAL OXIDATION;
PEAK PAIRING;
SILICON NANOWIRES;
SILICON SINGLE-ELECTRON TRANSISTOR;
WET-CHEMICAL ETCHING;
TUNNEL JUNCTIONS;
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EID: 0037667854
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.42.414 Document Type: Article |
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Times cited : (14)
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References (12)
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