Enhanced current gain in SiC power BJTs using surface accumulation layer transistor (SALTran) concept

IEEE Region 10 Annual International Conference, Proceedings/TENCON

Volumn D, Issue , 2004, Pages

  Kumar, M Jagadesh ^a   Parihar, Vinod ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; SILICON CARBIDE;

BASE CURRENTS; CURRENT GAIN; EMITTERS; SURFACE ACCUMULATION LAYER TRANSISTORS (SALTRAN);

BIPOLAR TRANSISTORS;

EID: 27944433853     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. M. J. Kumar and C. L. Reddy, "A New High Voltage 4H-SiC Lateral Dual Sidewall Schottky (LDSS) Rectifier: Theoretical Investigation and Analysis", IEEE Trans. on Electron Devices, Vol.50, pp. 1690-1693, July 2003.
2. S. H. Ryu, A. K. Agarwal, R. Singh and J. W. Palmour, "1800 V NPN Bipolar Junction Transistor in 4H-SiC," IEEE Electron Device Lett., vol.22, pp. 124-126, March 2001.
3. c of bipolar transistors under forced gain conditions," IEEE Trans. on Electron Devices, vol.41, pp.378-403, No.3, March 1994.
4. ATLAS User's Manual, Silvaco Int., 2000.