Hybrid CMOS/molecular memories using redox-active self-assembled monolayers

Proceedings of the IEEE Conference on Nanotechnology

Volumn 1, Issue , 2003, Pages 307-310

  Mathur, G ^a   Gowda, S ^a   Li, Qiliang ^a   Surthi, S ^a   Tamaru, S ^b   Lindsey, J ^b   Misra, V ^a  

^a North Carolina State University   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Capacitance; Capacitors; Frequency measurement; Hysteresis; Silicon compounds; Surface charging; Surface discharges; Surface impedance; Thickness measurement; Voltage

Indexed keywords

CAPACITANCE; CAPACITORS; CYCLIC VOLTAMMETRY; ELECTRIC POTENTIAL; ELECTROLYTES; HYSTERESIS; MOLECULES; MONOLAYERS; NANOTECHNOLOGY; REDOX REACTIONS; SILICON COMPOUNDS; SILICON OXIDES; SURFACE DISCHARGES; THICKNESS MEASUREMENT;

CAPACITOR STRUCTURES; FREQUENCY MEASUREMENTS; IMPEDANCE SPECTROSCOPY; OXIDATION AND REDUCTION; PHOSPHONATE LINKERS; REDOX ACTIVE MOLECULES; SURFACE CHARGING; SURFACE IMPEDANCES;

SELF ASSEMBLED MONOLAYERS;

EID: 15944418376     PISSN: 19449399     EISSN: 19449380     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2003.1231779     Document Type: Conference Paper

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