An improved strained-Si on Si1-xGex MOSFET mobility model

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn 2, Issue , 2004, Pages 1216-1219

  Zhao, Yang ^a   Zhang, Dawei ^a   Tian, Lilin ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC FIELDS; ELECTRON MOBILITY; GERMANIUM; HOLE MOBILITY; MATHEMATICAL MODELS; SILICON; THICKNESS MEASUREMENT;

DOPING CONCENTRATION; LAYER THICKNESS; MOLE FRACTIONS; STRAINED LAYERS;

MOSFET DEVICES;

EID: 21644443505     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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