Internal Stress in Polycrystalline Si Film Recrystallized by Excimer Laser Annealing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 2, 2004, Pages 532-533

  Matsuo, Naoto ^a   Kawamoto, Naoya ^b   Hamada, Hiroki ^c  

^a UNIVERSITY OF HYOGO   (Japan)

^b YAMAGUCHI UNIVERSITY   (Japan)

^c SANYO ELECTRIC CO LTD   (Japan)

Author keywords

Excimer laser annealing; Internal stress; Polycrystalline silicon; Raman spectroscopy; Stress relaxation

Indexed keywords

ANNEALING; CRYSTALLIZATION; EXCIMER LASERS; MORPHOLOGY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; RESIDUAL STRESSES; SCANNING ELECTRON MICROSCOPY; STRESS RELAXATION; THIN FILMS;

CRYSTAL GRAINS; EXCIMER LASER ANNEALING; FULL WIDTH AT HALF MAXIMUM (FWHM); GRAIN MORPHOLOGY;

POLYSILICON;

EID: 2142764524     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.532     Document Type: Article

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