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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 2, 2004, Pages 459-466

Temperature Dependence of the Band-Edge Transitions of ZnCdBeSe

(7) Hsieh, Chang Hsun a Huang, Ying Sheng a Ho, Ching Hwa b Tiong, Kwong Kau c Muñoz, Martin d Maksimov, Oleg d Tamargo, Maria C d

a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

b NATIONAL DONG HWA UNIVERSITY (Taiwan)

c NATIONAL TAIWAN OCEAN UNIVERSITY (Taiwan)

d CITY COLLEGE OF NEW YORK (United States)

Author keywords

Broadening parameter; Electroreflectance; Piezoreflectance; Temperature depended band gap; ZnCdBeSe

Indexed keywords

BAND STRUCTURE; EXCITONS; FILM GROWTH; PHASE TRANSITIONS; SEMICONDUCTING FILMS; THERMAL EFFECTS; THERMAL EXPANSION;

BROADENING PARAMETER; ELECTROREFLECTANCE; PIEZOREFLECTANCE; TEMPERATURE DEPENDENT BAND GAP; ZNCDBESE;

ZINC COMPOUNDS;

EID: 2142717447 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.459 Document Type: Article

Times cited : (15)

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