ZnBeSe epitaxy layers grown by photo-assisted metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 100-103

  Zhang, J Y ^a   Shen, D Z ^a   Fan, X W ^a   Yang, B J ^a   Zheng, Z H ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; EXCITONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOCHEMICAL REACTIONS; PHOTOLUMINESCENCE; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; THERMAL EFFECTS;

DEEP LEVEL EMISSION BAND; HIGH TEMPERATURE GROWTH; LOW TEMPERATURE GROWTH; ZINC BERYLLIUM SELENIDE;

MOLECULAR BEAM EPITAXY;

EID: 0033701534     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00036-1     Document Type: Article

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