Analysis of carbon nitride growth in pedestal reactors by chemical vapor deposition

Diamond and Related Materials

Volumn 14, Issue 9, 2005, Pages 1432-1443

  Yun, Jungheum ^a,b   Dandy, David S ^a  

^a Engineering Research Center and Hydraulics Laboratory   (United States)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Carbon nitride; Chemical vapor deposition; Simulation

Indexed keywords

APPROXIMATION THEORY; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; DATA ACQUISITION; POLYCRYSTALLINE MATERIALS; THIN FILMS;

COHESIVE ENERGY; INLET GAS COMPOSITION; POLYCRYSTALLINE CARBON NITRIDE; STAGNATION FLOW REACTORS;

CARBON NITRIDE;

EID: 21344439374     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2005.02.011     Document Type: Article

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