Advanced shallow trench isolation to suppress the inverse narrow channel effects for 0.24 μm pitch isolation and beyond

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2000, Pages 178-179

  Horita, K ^a   Kuroi, T ^a   Itoh, Y ^a   Shiozawa, K ^a   Eikyu, K ^a   Goto, K ^a   Inoue, Y ^a   Inuishi, M ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MOSFET DEVICES; SILICA; SILICON NITRIDE;

SHALLOW TRENCH ISOLATION (STI);

CMOS INTEGRATED CIRCUITS;

EID: 0033698748     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)