Fabrication of single and coupled quantum dots in single-wall carbon nanotubes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 6, 2001, Pages 2770-2774

  Suzuki, Masaki ^a,b   Ishibashi, Koji ^a,c   Ida, Tetsuya ^a   Tsuya, Daiju ^d   Toratani, Kenichirou ^d   Aoyagi, Yoshinobu ^a,c,e  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b TOYO UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d CHIBA UNIVERSITY   (Japan)

^e TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; DEPOSITION; ELECTRIC CONTACTS; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; ELECTRON TUNNELING; OPTIMIZATION; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; TRANSPORT PROPERTIES;

COUPLED QUANTUM DOTS; FORMATION MECHANISM; SINGLE QUANTUM DOTS; SINGLE WALL CARBON NANOTUBES; TUNNEL BARRIER;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035519215     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1415505     Document Type: Article

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