Optical polarization properties of InAs/GaAs quantum dot semiconductor optical amplifier

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2528-2530

  Jayavel, Pachamuthu ^d   Kita, Takashi ^a   Wada, Osamu ^a   Ebe, Hiroji ^b   Sugawara, Mitsuru ^b   Arakawa, Yasuhiko ^b   Nakata, Yoshiaki ^c   Akiyama, Tomoyuki ^c  

^a KOBE UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

^d SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Polarization; Quantum dots; SOA; TE mode; Thermal strain; TM mode

Indexed keywords

HETEROJUNCTIONS; LIGHT AMPLIFIERS; OPTICAL SWITCHES; PHOTOLUMINESCENCE; POLARIZATION; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

SOA; TE-MODE; THERMAL STRAIN; TM-MODE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 21244482531     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2528     Document Type: Conference Paper

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