Exact-exchange calculations of the electronic structure of AlN, GaN and InN

Computer Physics Communications

Volumn 169, Issue 1-3, 2005, Pages 28-31

  Qteish, A ^a   Al Sharif, A I ^a   Fuchs, M ^b   Scheffler, M ^b   Boeck, S ^c   Neugebauer, J ^c  

^a YARMOUK UNIVERSITY   (Jordan)

^b FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^c UNIVERSITY OF PADERBORN   (Germany)

Author keywords

Electronic structure; Exact exchange; Group III nitrides

Indexed keywords

ALUMINUM NITRIDE; APPROXIMATION THEORY; BAND STRUCTURE; ELECTRON ENERGY LEVELS; GALLIUM NITRIDE; INDIUM COMPOUNDS; PHASE TRANSITIONS; ZINC COMPOUNDS;

EXACT-EXCHANGE; GROUP-III NITRIDES; SELF-INTERACTIONS; SEMICORE BANDS;

ELECTRONIC STRUCTURE;

EID: 21244479384     PISSN: 00104655     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cpc.2005.03.008     Document Type: Conference Paper

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