Performance improvement of nickel salicided n-type metal oxide semiconductor field effect transistors by nitrogen implantation

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 4 A, 2002, Pages

  Chao, Tien Sheng ^a,b   Lee, Liang Yao ^a,b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Nickel; Nitrogen implant; Salicide

Indexed keywords

HOT CARRIERS; ION IMPLANTATION; NICKEL COMPOUNDS; NITROGEN; TRANSCONDUCTANCE;

DRIVING CURRENT;

MOSFET DEVICES;

EID: 0036544436     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l381     Document Type: Article

References (10)