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Volumn 13, Issue 11, 2005, Pages 3951-3960

Practical photoluminescence and photoreflectance spectroscopic system for optical characterization of semiconductor devices

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; LIGHT EMITTING DIODES; LIGHT MODULATION; LIGHT REFLECTION; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SIGNAL TO NOISE RATIO; SPECTROSCOPIC ANALYSIS;

EID: 21244474792     PISSN: 10944087     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OPEX.13.003951     Document Type: Article
Times cited : (11)

References (14)
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  • 8
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    • D. Y. Lin, F. C. Lin, Y. S. Huang, H. Qiang, F. H. Pollak, D. L. Mathine, and G. N. Maracas, "Piezoreflectance and photoreflectance study of GaAs/AlGaAs digital alloy compositional graded structures" J. Appl. Phys. 79, 460-466 (1996).
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    • Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure
    • C. J. Lin, Y. S. Huang, N. Y. Li, P. W. Li, and K. K. Tiong, "Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure," J. Appl. Phys. 90, 4565-4569 (2001).
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.