Numerical Calculation of Electronic Structure for Three-Dimensional Nanoscale Semiconductor Quantum Dots and Rings

Journal of Computational Electronics

Volumn 2, Issue 1, 2003, Pages 49-57

  Li, Yiming ^a,b  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

computer simulation; InAs GaAs; nonlinear iterative method; semiconductor quantum dots and quantum rings; transition energy

Indexed keywords

COMPUTER SIMULATION; COST EFFECTIVENESS; ELECTRONIC STRUCTURE; ENERGY GAP; III-V SEMICONDUCTORS; INDIUM ARSENIDE; ITERATIVE METHODS; MAGNETIC FIELDS; NANOCRYSTALS; NANORINGS; NARROW BAND GAP SEMICONDUCTORS; ONE DIMENSIONAL;

EFFECTIVE MASS APPROXIMATION; ELECTRON-HOLE TRANSITION ENERGY; INAS/GAAS; NANOSCALE SEMICONDUCTORS; NONLINEAR ITERATIVE METHOD; PENETRATION OF MAGNETIC FIELD; QUANTUM RING; TRANSITION ENERGY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 21244441744     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/A:1026264909118     Document Type: Article

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