Monte Carlo simulations of high-speed InSb-InAlSb FETs

IEEE Transactions on Electron Devices

Volumn 52, Issue 6, 2005, Pages 1072-1078

  Herbert, D C ^a   Childs, P A ^a   Abram, Richard A ^b   Crow, G C ^b   Walmsley, M ^b  

^a UNIVERSITY OF BIRMINGHAM   (United Kingdom)

^b DURHAM UNIVERSITY   (United Kingdom)

Author keywords

High speed response; Impact ionization; InSb; Low power; MODFET; Monte Carlo simulation

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; GATES (TRANSISTOR); IMPACT IONIZATION; MONTE CARLO METHODS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES;

HIGH SPEED RESPONSE; INDIUM ANTIMONY; MODFET;

FIELD EFFECT TRANSISTORS;

EID: 21044457994     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.848115     Document Type: Article

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