Intrinsic temperature sensitivities of 1.3μm GaInNAs/GaAs, InGaAsP/InP and AlGaInAs/InP-based semiconductor lasers

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 1, Issue , 2003, Pages 39-40

  Sweeney, Stephen J ^a   Fehse, Robin ^a   Adams, Alfred R ^a   Riechert, H ^b  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SPONTANEOUS EMISSION; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

INTRINSIC TEMPERATURE SENSITIVITY; TEMPERATURE DEPENDENCE; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 0344897171     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. S. Sato et al., IEEE Phot. Tech. Lett., 11, pp.1560-1562, 1999.
2. Phillips et al., IEEE J. Sel. Top. Quant. Electr., 5, pp. 401-412, 1999.
3. Fehse et al., IEEE J. Sel. Top. Quant. Electr., 8, pp. 801-810, 2002.