Fabrication of ferromagnetic single-electron tunneling devices by utilizing metallic nanowire as hard mask stencil

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Niizeki, T ^a   Kubota, H ^a,b   Ando, Y ^a   Miyazaki, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC TUNNEL JUNCTIONS (MTJ); NANOWIRES; QUANTUM RESISTANCE; SINGLE-ELECTRON TUNNELING DEVICES;

ELECTRON BEAM LITHOGRAPHY; FERROMAGNETISM; MAGNETORESISTANCE; OXIDATION; SIGNAL TO NOISE RATIO; TUNNEL JUNCTIONS; VACUUM;

ELECTRON TUNNELING;

EID: 21044436161     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1850408     Document Type: Conference Paper

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