A new fabrication method for ultra small tunnel junctions

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 4 A, 1996, Pages 2369-2371

  Ono, Keiji ^a   Shimada, Hiroshi ^a   Kobayashi, Shun Ichi ^a   Ootuka, Youiti ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Electron beam lithography; Microfabrication; Single electron charging effect; Tunnel junctions; Vacuum deposition

Indexed keywords

ACTUATORS; ALUMINUM; DEPOSITION; ELECTRON BEAM LITHOGRAPHY; EVAPORATION; MASKS; METALLIC FILMS; MICROELECTRONICS; OXIDATION; SILICON NITRIDE; SUBSTRATES;

DOUBLE ANGLE EVAPORATION; MICROFABRICATION; PIEZOELECTRIC ACTUATORS; PLASMA OXIDATION; SINGLE ELECTRON CHARGING EFFECT; ULTRA SMALL TUNNEL JUNCTIONS; VACUUM DEPOSITION;

TUNNEL JUNCTIONS;

EID: 0030123746     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2369     Document Type: Article

References (2)

1. For a review, see Single Charge Tunneling, eds. H. Grabert and M. H. Devoret (Plenum, New York, 1992).
2. G. J. Dolan: Appl. Phys. Lett. 31 (1977) 337.