Enhancement of tunnel magnetoresistance in ferromagnetic single-electron transistors

Physica B: Condensed Matter

Volumn 329-333, Issue II, 2003, Pages 1304-1305

  Matsuda, Ryouji ^b   Kanda, Akinobu ^a   Ootuka, Youiti ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Ferromagnetic tunnel junction; Single electron transistor; Tunnel magnetoresistance

Indexed keywords

ELECTRIC CHARGE; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; ELECTRONS; FERROMAGNETIC MATERIALS; MAGNETIZATION; NICKEL COMPOUNDS; POLARIZATION; TRANSISTORS;

FERROMAGNETIC TUNNEL JUNCTIONS; SINGLE-ELECTRON TRANSISTORS; SINGLE-ELECTRON TUNNELING; TUNNEL MAGNETORESISTANCE;

MAGNETORESISTANCE;

EID: 21044460119     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(02)02255-X     Document Type: Conference Paper

References (9)

1. K. Ono, H. Shimada, Y. Ootuka, J. Phys. Soc. Japan 66 (1997) 1261.
2. K. Ono, H. Shimada, Y. Ootuka, J. Phys. Soc. Japan 65 (1996) 3449.
3. S. Mitani, S. Takahashi, K. Takanashi, et al., Phys. Rev. Lett. 81 (1998) 2799.
4. H. Bruckl, G. Reiss, et al., Phys. Rev. B 58 (1998) R8893.
5. S. Takahashi, S. Maekawa, Phys. Rev. Lett. 80 (1998) 1758.
6. Y. Ootuka, R. Matsuda, K. Ono, H. Shimada, Physica B 280 (2000) 394.
7. S. Iwabuchi, T. Tanamoto, R. Kitakawa, Physica B 249-251 (1998) 276.
8. X.H. Wang, A. Bratters, Phys. Rev. Lett. 83 (1999) 5138.
9. X. Wang, R. Egger, H. Grabert, Europhys. Lett. 38 (1997) 545.