Thermal stability parameters in synthetic antiferromagnetic free layers in magnetic tunnel junctions

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Saito, Y ^a,b   Sugiyama, H ^a,b   Inomata, K ^b,c  

^a TOSHIBA CORPORATION   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT PULSES; ELECTRONIC NANODEVICES; MAGNETIC TUNNEL JUNCTIONS (MTJ); MONO-FREE LAYERS;

ANTIFERROMAGNETISM; ASPECT RATIO; COERCIVE FORCE; MAGNETIC ANISOTROPY; MAGNETIC DOMAINS; SWITCHING; THERMODYNAMIC STABILITY;

TUNNEL JUNCTIONS;

EID: 20944450835     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1853209     Document Type: Conference Paper

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