Synthetic ferrimagnet free layer tunnel junction for magnetic random access memories

Journal of Applied Physics

Volumn 91, Issue 10 I, 2002, Pages 7700-7702

  Sousa, R C ^a,b   Zhang, Zhongzhi ^a,b   Freitas, P P ^a,b  

^a INESC   (Portugal)

^b INSTITUTO SUPERIOR TÉCNICO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FIELD; COUPLING RANGE; DOMAIN WALL MOTION; FREE LAYERS; MAGNETIC RANDOM ACCESS MEMORIES; MATERIAL ANISOTROPY; SIGNAL LEVEL; SINGLE-STEP; SPIN-DEPENDENT TUNNEL JUNCTIONS; SWITCHING FIELD; SYNTHETIC FERRIMAGNET;

FERRIMAGNETISM; MAGNETIC STORAGE; MAGNETIZATION REVERSAL;

TUNNEL JUNCTIONS;

EID: 0037094807     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1447530     Document Type: Article

References (6)

1. H. A. M. van den Berg, W. Clemens, G. Giers, G. Rupp, and M. Vieth, IEEE Trans. Magn. 32, 4624 (1996). emg IEMGAQ 0018-9464
2. K. R. Coffey, B. A. Gurney, D. E. Heim, H. Lefakis, D. Mauri, V. S. Speriosu, and D. R. Wilhoit, US Patent No. 5583725 (1996).
3. S. Tehrani et al., IEEE Trans. Magn. 36, 2752 (2000). emg IEMGAQ 0018-9464
4. S. Cardoso, V. Gehanno, R. Ferreira, and P. P. Freitas, IEEE Trans. Magn. 35, 2952 (1999). emg IEMGAQ 0018-9464
5. J. A. Osborn, Phys. Rev. 67, 351 (1945). phr PHRVAO 0031-899X
6. A. Veloso and P. P. Freitas, J. Appl. Phys. 87, 5744 (2000). jap JAPIAU 0021-8979