Switching field distribution in magnetic tunnel junctions with a synthetic antiferromagnetic free layer

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Jeong, W C ^a   Park, J H ^a   Koh, G H ^a   Jeong, G T ^a   Jeong, H S ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETIC FREE LAYERS; EDGE PINNING; MAGNETIC LAYERS; SWITCHING FIELD DISTRIBUTION; MAGNETIC TUNNEL JUNCTIONS (MTJ); SUBMICRON PATTERNS; SYNTHETIC ANTIFERROMAGNETIC (SAF) FREE LAYERS;

ANTIFERROMAGNETISM; ASPECT RATIO; CMOS INTEGRATED CIRCUITS; ELECTRIC CONTACTS; MAGNETIC DOMAINS; MAGNETIC MOMENTS; RANDOM ACCESS STORAGE; REACTIVE ION ETCHING; ANNEALING; DEMAGNETIZATION; ELECTRODES; SILICON WAFERS; THERMOOXIDATION;

TUNNEL JUNCTIONS;

EID: 20944443608     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1846558     Document Type: Conference Paper

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