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Volumn 483-485, Issue , 2005, Pages 381-384
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Optical-capacitance-transient spectroscopy study for deep levels in 4H-SiC epilayer grown by cold wall chemical vapor deposition
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Author keywords
Cold wall CVD; Configuration coordinate diagram; Deep level; Optical excitation energy; Optical capacitance transient spectroscopy
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Indexed keywords
CAPACITANCE;
CHEMICAL VAPOR DEPOSITION;
EPILAYERS;
ULTRAVIOLET VISIBLE SPECTROSCOPY;
COLD WALL CVD;
CONFIGURATION COORDINATE DIAGRAM;
OPTICAL EXCITATION ENERGY;
OPTICAL-CAPACITANCE-TRANSIENT SPECTROSCOPY;
SILICON CARBIDE;
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EID: 20744450281
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/0-87849-963-6.381 Document Type: Conference Paper |
Times cited : (2)
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References (12)
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