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Volumn 483-485, Issue , 2005, Pages 381-384

Optical-capacitance-transient spectroscopy study for deep levels in 4H-SiC epilayer grown by cold wall chemical vapor deposition

Author keywords

Cold wall CVD; Configuration coordinate diagram; Deep level; Optical excitation energy; Optical capacitance transient spectroscopy

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; EPILAYERS; ULTRAVIOLET VISIBLE SPECTROSCOPY;

EID: 20744450281     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.381     Document Type: Conference Paper
Times cited : (2)

References (12)
  • 2
    • 0000892819 scopus 로고    scopus 로고
    • C. G. Hemmingsson, N. T. Son, A. Ellison, J. Zhang, and E. Janzén, Phys. Rev B 58 (1998) R10119.
    • C. G. Hemmingsson, N. T. Son, A. Ellison, J. Zhang, and E. Janzén, Phys. Rev B 58 (1998) R10119.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.