Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction

Solid-State Electronics

Volumn 43, Issue 12, 1999, Pages 2191-2199

  Sonnenberg, Victor ^a,b   Martino, João Antonio ^a  

^a LSILaboratorio Sist I   (Brazil)

^b FACULDADE DE TECNOLOGIA DE SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; SILICON ON INSULATOR TECHNOLOGY;

ACCUMULATION LAYER EFFECTS;

MOSFET DEVICES;

EID: 0033283712     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00191-4     Document Type: Article

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